Although FeFET-based memory is probably a while off from large-scale commercialization, these advances give hope that this day won’t be far off now. Posted in Science Tagged FeFET, ...

Ferroelectric FET (FeFET) is a promising memory device because of its low-power, high-speed and high-capacity. Toward 3D integration for higher capacity, a team of researchers developed a ...

Ferroelectric FET (FeFET) is a promising memory device because of its low-power, high-speed and high-capacity. Toward 3D integration for higher capacity, a team of researchers has developed a ...

Based on these device designs, Mobayashi fabricated a FeFET with ferroelectric-HfO 2 and an ultrathin IGZO channel. Fig. 3(a) shows the measured drain-current versus gate-voltage after applying write ...

FeFET to Extend Moore's Law. R. Colin Johnson, EETimes 1/15/2015 11:00 AM EST. PORTLAND, Ore. -- Universal memory replacing DRAM, SRAM, flash and nearly every transistor in a computer may result from ...

Besides, a comprehensive evaluation is performed on a 128 × 128 FeFET AND-type memory array in terms of area, latency, power and throughput. Compared with the AES-based scheme, our scheme shows ~22.6× ...

A technical paper titled “First demonstration of in-memory computing crossbar using multi-level Cell FeFET” was published by researchers at Robert Bosch, University of Stuttgart, Indian Institute of ...