T3L was matured by HRL under the Office of the Undersecretary of Defense’s (OUSD) State-of-the-Art Radio Frequency Gallium Nitride (STARRY NITE) and the Defense Research Advanced Projects Agency’s ...
Built on novel GaN-on-GaN technology, onsemi’s vertical GaN architecture sets a new benchmark for power density, efficiency ...
SEOUL, South Korea, Sept. 11, 2025 /PRNewswire/ -- DB HiTek, a leading 8-inch specialty foundry, today announced it is in the final stages of development of its 650V E-Mode GaN HEMT (Gallium Nitride ...
DURHAM, N.C.--(BUSINESS WIRE)--Cree, Inc. (Nasdaq: CREE) announces the qualification and production release of two new GaN processes: G40V4, a 0.25µm process with operating drain voltage up to 40V, ...
As global energy demand surges from energy intensive applications, onsemi has introduced vertical gallium nitride (vGaN) ...
For nearly two decades, gallium nitride (GaN) semiconductor technology has been exposed to herald a paradigm shift in RF power capability. Though all of these promises haven’t materialized yet, GaN ...
Japan-based Rohm Semiconductor and Taiwan Semiconductor Manufacturing Company (TSMC) have announced a strategic partnership to advance the development and mass production of gallium nitride (GaN) ...
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