One of the joys of writing up the entries for the 2025 Component Abuse Challenge has come in finding all the different alternative uses for the humble transistor. This building block of all modern ...
A new technical paper titled “Large-scale crossbar arrays based on three-terminal MoS2 memtransistors” was published by ...
For our 2025 Component Abuse Challenge there have been a set of entries which merely use a component for a purpose it wasn’t quite intended, and another which push misuse of a part into ...
Abstract: In this paper, artificial synapses based on four terminal ferroelectric Schottky barrier field effect transistors (FE-SBFETs) are experimentally demonstrated. The ferroelectric polarization ...
Katholieke Universiteit Leuven, Department of Chemistry, Celestijnenlaan 200 F, B-3001 Leuven, Belgium, Universität Würzburg, Institut für Organische Chemie, Am Hubland, D-97074 Würzburg, Germany, and ...
32 hFE tester This hFE tester is interesting because of its simplicity and because it enables the of both PNP and NPN transistors to be measured. Further- more the measurement is independent of the ...
Abstract: AlGaN/GaN heterosystems with their two dimensional electron gas at the interface enable high-mobility transistor devices. We present a technology for high-mobility three-terminal junction ...
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