A comprehensive review of silicon carbide pressure sensors, focusing on their development, core technologies, and potential ...

A new review paper in Engineering delves into silicon carbide (SiC)-based pressure sensors. SiC, a third-generation semiconductor, shows great ...

Frederic Devriere, Business Marketing Manager, Teledyne e2v, explains how a consortium funded by the European Union (EU) is ...

Department of Chemistry, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea Samsung SDI, 150-20, Gongse-ro, Giheung-gu, Yongin-si, Gyeonggi-do 17084, Republic of Korea ...

An article recently made available on Engineering delves into silicon carbide (SiC)-based ... It begins with an analysis of SiC single-crystal growth and epitaxy. The growth quality of SiC single ...

Tianjin Key Laboratory of Structure and Performance for Functional Molecules, College of Chemistry, Tianjin Normal University, Tianjin 300387, China *Yu-Xia Wang − ‡ Tianjin Key Laboratory of ...

Abstract: This study presents the design of a graphene-doped silicon sensor that incorporates a two-dimensional photonic crystal nanocavity resonator ... when combined with graphene doping, ...

Abstract: We employed a highly accurate transfer printing technique based on mechanically guided alignment to achieve side-coupled hybrid integration structures between different types of photonic ...

State Key Laboratory for Mechanical Behavior of Materials, Electronic Materials Research Laboratory, (Key Lab of Education Ministry) and School of Electronic and Information Engineering, Xi’an ...

In the past decade, color centers in silicon carbide (SiC) have emerged as promising platforms ... In this review, we first provide a brief overview of the progress in single-color center fabrications ...