Infineon has announced that it will supply the US EV-maker Rivian with power modules for traction inverters for its R2 mid ...

Toshiba Electronics Europe has announced volume shipments of its 3rd generation, 650V SiC MOSFETs in the compact DFN8x8 ...

This patenting activity is marked by the acceleration of Toshiba in the SiC power device patent landscape, bringing it up the ...

MEC175xB controllers are compatible with MPLAB ® X Integrated Development Environment (IDE), and supported by example ...

Nano2® 415 SMD Series Fuse, the first surface-mount fuse from Littelfuse with a 1500 A interrupting rating at 277 V. Designed ...

Pictured above: Pulsed-mode MOCVD is far better at producing silicon-doped AlN layers than conventional MOCVD, according to current-voltage transmission line measurements using electrodes with 4 µm ...

STMicroelectronics says its new high-voltage half-bridge gate drivers for GaN applications add extra flexibility and features ...

SiC and GaN company Navitas Semiconductor has appointed Cristiano Amoruso to the company’s board of directors, effective ...

Sir Colin Humphreys, Professor of Materials Science at Queen Mary University of London, explains that a team of UK scientists ...